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March 2013
FQT13N06
N -Channel QFET ? MOSFET
60 V, 2.8 A, 14 0 m Ω
Description
This N-Channel enhancement mode power MOSFET
is produced using Fairchild Semiconductor ? ’s
proprietary planar stripe and DMOS technology. This
advanced MOSFET technology has been especially
tailored to reduce on-state resistance, and to provide
superior switching performance and high avalanche
energy strength. These devices are suitable for
switched mode power supplies, audio amplifier, DC
motor control, and variable switching power
applications.
Features
? 2.8 A, 60 V, R DS(on) = 14 0 mΩ(Max.) @V GS =10 V, I D = 1.4 A
? Low G ate C harge ( Typ. 5 .8 nC)
? Low Crss ( Typ. 1 5 pF)
? 100% A valanche T ested
D
!
D
"
S
G !
! "
"
"
G
Absolute Maximum Ratings
SOT-223
T C = 25°C unless otherwise noted
!
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FQT13N06
60
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 70°C)
2.8
2.24
A
A
I DM
Drain Current
- Pulsed
(Note 1)
11.2
A
V GSS
Gate-Source Voltage
± 25
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
85
2.8
0.21
7.0
2.1
0.017
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 " from case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R θ JA
Parameter
Thermal Resistance, Junction-to-Ambient *
Typ
--
Max
60
Unit
°C / W
* When mounted on the minimum pad size recommended (PCB Mount)
?20 0 2 Fairchild Semiconductor Corporation
FQ T13N06 Rev. C0
www.fairchildsemi.com
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